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Log - log kinetic curves for GaAs thermal oxidation at 500 ° C in the presence of compositions ( a ) CrO3 + PbO and ( b ) CrO3 + V2O5 containing ( 1 ) 10. ( 2 ) 20 , ( 3 ) 30 , ( 4 ) 40 , ( 5 ) 50 , ( 6 ) 60 , ( 7 ) 70 , ( 8 ) 80 ...
Log - log kinetic curves for GaAs thermal oxidation at 500 ° C in the presence of compositions ( a ) CrO3 + PbO and ( b ) CrO3 + V2O5 containing ( 1 ) 10. ( 2 ) 20 , ( 3 ) 30 , ( 4 ) 40 , ( 5 ) 50 , ( 6 ) 60 , ( 7 ) 70 , ( 8 ) 80 ...
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As shown in [ 3 ] for alkali- metal picrates , in the presence of Rb * , complex II is organized differently than in the presence of K + . With increasing the [ Rb + ] : [ II ] ratio from 0 to 4 , the intensity of the band of II first ...
As shown in [ 3 ] for alkali- metal picrates , in the presence of Rb * , complex II is organized differently than in the presence of K + . With increasing the [ Rb + ] : [ II ] ratio from 0 to 4 , the intensity of the band of II first ...
Trang 1075
Layer growth isotherms on GaAs in the presence of In2 ( SO4 ) 3 at a temperature of ( 1 ) 475 , ( 2 ) 485 , ( 3 ) 500 , ( 4 ) 525 , ( 5 ) 550 , and ( 6 ) 600 ° C . in both cases . The grown film thickness was measured using laser ...
Layer growth isotherms on GaAs in the presence of In2 ( SO4 ) 3 at a temperature of ( 1 ) 475 , ( 2 ) 485 , ( 3 ) 500 , ( 4 ) 525 , ( 5 ) 550 , and ( 6 ) 600 ° C . in both cases . The grown film thickness was measured using laser ...
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Vol 48 No 7 | 955 |
Synthesis and Luminescence of Arsenic III and AntimonyIII Halide Complexes | 961 |
Synthesis and Study of Gallium HexamolybdocobaltateIII | 972 |
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