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SYNTHESIS AND PROPERTIES OF INORGANIC COMPOUNDS Growth of Thermal Oxide Layers on GaAs and InP in the Presence of Ammonium Heptamolybdate I. Ya . Mittova , S. S. Lavrushina , and A. V. Afonchikova Voronezh State University ...
SYNTHESIS AND PROPERTIES OF INORGANIC COMPOUNDS Growth of Thermal Oxide Layers on GaAs and InP in the Presence of Ammonium Heptamolybdate I. Ya . Mittova , S. S. Lavrushina , and A. V. Afonchikova Voronezh State University ...
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Thermal layer growth isotherms on GaAs in the pres- ence of ( NH4 ) 6M07024 at ( 1 ) 480 , ( 2 ) 500 , ( 3 ) 510 , ( 4 ) 520 , and ( 5 ) 540 ° C . ters are listed in Table 1. The parameters are different for different semiconductors .
Thermal layer growth isotherms on GaAs in the pres- ence of ( NH4 ) 6M07024 at ( 1 ) 480 , ( 2 ) 500 , ( 3 ) 510 , ( 4 ) 520 , and ( 5 ) 540 ° C . ters are listed in Table 1. The parameters are different for different semiconductors .
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The LiF - Li2WO - LiKWO - BaWO4 four - component system , which is the stable tetrahedron of the Li , K , Ba || F , WO4 quaternary reciprocal system , is studied for the first time using differential thermal analysis ( DTA ) , visual ...
The LiF - Li2WO - LiKWO - BaWO4 four - component system , which is the stable tetrahedron of the Li , K , Ba || F , WO4 quaternary reciprocal system , is studied for the first time using differential thermal analysis ( DTA ) , visual ...
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Vol 49 No 8 | 1136 |
Synthesis and Characterization of Some Rubidium Orthoperiodates | 1143 |
Interaction of Zirconium Yttrium and Zinc Tetrahydroborate Complexes | 1154 |
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