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Intrinsic GaAs and InP thermal oxidation is known to generate volatile - deprived oxide layers . In addition , as a result of intrinsic transit reactions ( 1 ) across the GaAs / film interface , an elementary arsenic layer is formed at ...
Intrinsic GaAs and InP thermal oxidation is known to generate volatile - deprived oxide layers . In addition , as a result of intrinsic transit reactions ( 1 ) across the GaAs / film interface , an elementary arsenic layer is formed at ...
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Thermal layer growth isotherms on GaAs in the presence of ( NH4 ) 6M07024 at ( 1 ) 480 , ( 2 ) 500 , ( 3 ) 510. ( 4 ) 520 , and ( 5 ) 540 ° C . Fig . 2. Growth isotherms for thermal layers on InP in the presence of ( NH4 ) 6M07024 at ...
Thermal layer growth isotherms on GaAs in the presence of ( NH4 ) 6M07024 at ( 1 ) 480 , ( 2 ) 500 , ( 3 ) 510. ( 4 ) 520 , and ( 5 ) 540 ° C . Fig . 2. Growth isotherms for thermal layers on InP in the presence of ( NH4 ) 6M07024 at ...
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IR absorption bands from layers grown on InP during ( NH4 ) 6M0,024 · 41,0 activated thermal oxidation Here and in Table 5 , ( • ) according to the ( NH4 ) 6M07024 4H20 activator spectrum ; ( * ) according to the spectra of intrinsic ...
IR absorption bands from layers grown on InP during ( NH4 ) 6M0,024 · 41,0 activated thermal oxidation Here and in Table 5 , ( • ) according to the ( NH4 ) 6M07024 4H20 activator spectrum ; ( * ) according to the spectra of intrinsic ...
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Vol 49 No 8 | 1134 |
Synthesis and Characterization of Some Rubidium Orthoperiodates | 1143 |
Interaction of Zirconium Yitrium and Zinc Tetrahydroborate Complexes | 1154 |
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