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Kết quả 1-3 trong 68
Trang S-13
It is seen that U < 0 upon a considerable relaxation displacement of O , whereas for neutral and ( cationic ) defect states , additional ( metastable ) minima Si of U9 are absent ; i.e. , the most stable position is the site of the ...
It is seen that U < 0 upon a considerable relaxation displacement of O , whereas for neutral and ( cationic ) defect states , additional ( metastable ) minima Si of U9 are absent ; i.e. , the most stable position is the site of the ...
Trang S-80
This structural feature is responsible for a considerable anisotropy of the elec( 110 ) trical and optical properties of ZnAsą and CdAs2 [ 3–5 ) . A significant anisotropy of Seebeck coefficient endows ZnAs2 and CdAsą single crystals ...
This structural feature is responsible for a considerable anisotropy of the elec( 110 ) trical and optical properties of ZnAsą and CdAs2 [ 3–5 ) . A significant anisotropy of Seebeck coefficient endows ZnAs2 and CdAsą single crystals ...
Trang S-298
Often , tight pairs strate and is of considerable technological importance or clusters of defects have properties different from the for electronics . Intergrowth of one compound composition with another is a common occurrence and may ...
Often , tight pairs strate and is of considerable technological importance or clusters of defects have properties different from the for electronics . Intergrowth of one compound composition with another is a common occurrence and may ...
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Nội dung
Effect of Defects on Electronic Structure Chemical Bonding | S-3 |
Contents | S-16 |
Conclusions | S-30 |
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