Russian Journal of Inorganic Chemistry, Tập 45British Library Lending Division with the cooperation of the Royal Society of Chemistry, 2000 |
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Kết quả 1-3 trong 31
Trang S-88
... bandgap ( & was set equal to 1.144 or 1.021 eV ) , it was presumed that a deep level with & ; ≈ 0.275 eV [ 111 ] or & ; ≈ 0.15 eV [ 107 ] , through which radiative recombination of nonequilibrium charge carriers occurs , exists in the ...
... bandgap ( & was set equal to 1.144 or 1.021 eV ) , it was presumed that a deep level with & ; ≈ 0.275 eV [ 111 ] or & ; ≈ 0.15 eV [ 107 ] , through which radiative recombination of nonequilibrium charge carriers occurs , exists in the ...
Trang S-91
... bandgap at 4.2 K is = εe ( energy position of the line 1 ) + ε Ξε G + k✪1 = 1.021 eV . Therefore , the luminescence spec- tra are another peace of evidence that cadmium diars- enide has an indirect - gap energy structure ; & 1.021 eV ...
... bandgap at 4.2 K is = εe ( energy position of the line 1 ) + ε Ξε G + k✪1 = 1.021 eV . Therefore , the luminescence spec- tra are another peace of evidence that cadmium diars- enide has an indirect - gap energy structure ; & 1.021 eV ...
Trang S-92
... bandgap minimum ( 300 K ) . p , Ω cm 105 ZnAs2 104 103 102 α B a = 9.18 Å b = 7.72 Å c = 7.99 Å b 10'- 6 2 4 6 8 10 12 103 / T , K - 1 Fig . 14. Resistivity - temperature curves for oriented ZnAs2 specimens [ 4 ] . rect transition ...
... bandgap minimum ( 300 K ) . p , Ω cm 105 ZnAs2 104 103 102 α B a = 9.18 Å b = 7.72 Å c = 7.99 Å b 10'- 6 2 4 6 8 10 12 103 / T , K - 1 Fig . 14. Resistivity - temperature curves for oriented ZnAs2 specimens [ 4 ] . rect transition ...
Nội dung
Effect of Defects on Electronic Structure Chemical Bonding | S-3 |
Contents | S-16 |
Silicon Nitrides and NitrideBased Materials | S-18 |
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Thuật ngữ và cụm từ thông dụng
ų Acta Crystallogr Akad analysis anions anisotropy atoms band bandgap calculated cations CdAs₂ Central atom characterized Chem chemical bonding chemical shift Chemistry coefficient complexes composition compounds Condens coordination polyhedra coordination sphere corresponding covalent crystal structure crystal-chemical curves decrease density diffusion distance domain of influence electron energy example exciton Fedorov fluorides formation H₂O heterovalent impurity increase Inorganic interactions interatomic interface ionic isomorphism Khim lattice layer ligand magnetic Marenkin Mater melting metal method molecular molecules Moscow nanotubes Nauk SSSR Neorg nitride nuclear nuclei overlap oxide oxo ligand oxygen atoms parameters phase Phys point defects polyhe polyhedron properties radii reaction respectively Russian Journal silicon single crystals Solid angle solid solutions space group spectra stability struc studied sublattices symmetry Table temperature tion topological transition tungsten(VI ture vacancies valence values VD polyhedra VVDP ZnAs₂